[16a-D511-1~10] 15.5 Group IV crystals and alloys

[16a-D511-7] Solid phase crystallization of amorphous Ge / Mg / SiO₂ stacked structure

〇(B)Atsuki Morimoto¹, Towa Hirai¹, Ayato Takazaiku¹, Ryusei Komine¹, Kenichiro Takakura¹, Isao Tunoda¹ (1.NIT(KOSEN),Kumamoto College)

Keywords:semiconductor, crystallinity

We evaluated the solid phase growth crystallization of amorphous Ge/Mg/SiO₂ stacked structures. As a result, the Mg₂Ge crystal peak was observed in the sample annealing at 250-400°C for 2 hours at the excitation laser wavelength of 457 nm. In addition, peaks due to Ge crystals were also observed at temperatures above 350°C. The peak due to Mg₂Ge crystal was also observed. At 400°C, only Ge crystal was observed at the excitation laser wavelength of 633 nm, suggesting that the Mg layer exchange crystallization of amorphous Ge was induced at 400°C while Mg₂Ge crystal was formed.