Surface Segregation of Si and Ge on Al/Si<sub>0.2</sub>Ge<sub>0.8</sub>(111) Structure by Annealing

Taiki Sakai; Keigo Matsushita; Akio Ohta; Noriyuki Taoka; Katsunori Makihara; Yuji Yamamoto; Seiichi Miyazaki

Presentation information

Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[16a-D511-1~10] 15.5 Group IV crystals and alloys

Thu. Mar 16, 2023 9:00 AM - 11:30 AM D511 (Building No. 11)

Kentarou Sawano(Tokyo City Univ.)

10:45 AM - 11:00 AM

[16a-D511-8] Surface Segregation of Si and Ge on Al/Si_0.2Ge_0.8(111) Structure by Annealing

〇(M1)Taiki Sakai¹, Keigo Matsushita¹, Akio Ohta¹, Noriyuki Taoka¹, Katsunori Makihara¹, Yuji Yamamoto², Seiichi Miyazaki¹ (1.Grad.Sch.of Eng.,Nagoya Univ., 2.IHP)

Keywords:SiGe, Segregation, XPS

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Presentation information

[16a-D511-1~10] 15.5 Group IV crystals and alloys

[16a-D511-8] Surface Segregation of Si and Ge on Al/Si0.2Ge0.8(111) Structure by Annealing

[16a-D511-8] Surface Segregation of Si and Ge on Al/Si_0.2Ge_0.8(111) Structure by Annealing