[16a-D511-1~10] 15.5 Group IV crystals and alloys

▲ [16a-D511-9] Temperature dependence of GeS crystallization by vapor transport method

〇(P)Qinqiang Zhang¹, Ryo Matsumura¹, Naoki Fukata¹ (1.NIMS)

Keywords:germanium monosulfide (GeS), temperature dependence, vapor transport method

Germanium sulfide (GeS) is one of the layered two-dimensional semiconductors composited by group IV metal/metalloid and group VI monochalcogenide. Unlike the prevalent graphene and other group IV semiconductors, GeS possesses a direct bandgap in the visible region (1.65 eV). In addition, GeS shows a great potential in group IV based electronic and optoelectronic applications for photoabsorbers, photodetectors and light emitters with a vertical heterostructure alignment. In this study, the temperature-dependent crystallization of GeS was investigated by utilizing a physical vapor transport method.