[16a-D704-1~10] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▲ [16a-D704-2] Reduction of Write-Error Rates in Voltage-Induced Dynamic Precessional Switching by Elliptical Cylinder Recording Layers

〇Rie Matsumoto¹、Shinji Yuasa¹、Imamura Hiroshi¹ (1.AIST)

キーワード：spintronics, VCMA, MRAM

Voltage-controlled MRAMs (VCMRAMs) based on dynamic precessional switching in magnetic tunnel junctions (MTJs) are expected to be the ultimate low-power non-volatile memory devices. However, the high write error rate (WER) hinders the reliable operation of VCMRAMs. To significantly reduce the WER, we focused on the lateral shape of the MTJ, which is a circular cylinder in conventional MTJs. In this study, we propose a novel switching method using an elliptical-cylinder MTJ that attains substantially low WERs. Our analysis clarified that the WER is reduced by the reduced voltage-pulse duration, which is enabled by the energy profile of elliptic cylinder-shaped nanomagnets.