[16a-D704-1~10] 10.3 Spin devices, magnetic memories and storages

▲ [16a-D704-9] Noise characteristics of tunnel magnetoresistance sensors under AC modulation field

〇Tomoya Nakatani¹, Hirofumi Suto¹, Prabhanjan Kulkarni¹, Hitoshi Iwasaki¹, Yuya Sakuraba¹ (1.NIMS)

Keywords:Magnetic sensor, tunnel magnetoresistance, 1/f noise

We fabricated tunnel magnetoresistance (TMR) devices with even-function resistance-field response curves with neglisible magnetic hysteresis. We characterized the noise properties under external AC magnetic field which was recently proposed as a method to suppres 1/f noise. However, we confirmed that the 1/f noise originated from the thermal fluctuation of magnetization was transferred by the AC modulation field.