[16a-D704-1~10] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▲ [16a-D704-9] Noise characteristics of tunnel magnetoresistance sensors under AC modulation field

〇Tomoya Nakatani¹、Hirofumi Suto¹、Prabhanjan Kulkarni¹、Hitoshi Iwasaki¹、Yuya Sakuraba¹ (1.NIMS)

キーワード：Magnetic sensor, tunnel magnetoresistance, 1/f noise

We fabricated tunnel magnetoresistance (TMR) devices with even-function resistance-field response curves with neglisible magnetic hysteresis. We characterized the noise properties under external AC magnetic field which was recently proposed as a method to suppres 1/f noise. However, we confirmed that the 1/f noise originated from the thermal fluctuation of magnetization was transferred by the AC modulation field.