[16a-E402-1~12] 12.4 Organic light-emitting devices and organic transistors

[16a-E402-12] Improvement of carrier injection properties at carbon electrode/organic semiconductor interfaces through chemical doping

〇Kazuyoshi Watanabe¹, Naoki Miura², Hiroaki Taguchi², Takeshi Komatsu², Hideyuki Nosaka², Toshihiro Okamoto¹, Yu Yamashita¹, Shun Watanabe¹, Jun Takeya¹ (1.Univ. of Tokyo, 2.NTT Device Tech. Labs., NTT Corp.)

Keywords:organic field-effect transistor, carbon electrode, contact doping

Field-effect transistors consisting of single-crystalline organic semiconductors exhibit high carrier mobility exceeding 10 cm²/Vs, thus they have been attempted for use in lightweight, inexpensive, mass-producible communication and sensor devices. However, the electrode material is often an expensive precious metal such as gold or silver, which has been a bottleneck in terms of cost reduction and low-environmental loading. Herein, we have adopted inexpensive carbon as the contact electrode and found that chemically doped carbon contact exhibits a reasonably low contact resistance of 510 Ω·cm, which is comparable to gold electrodes.