[16p-A301-7~12] 13.7 Compound and power devices, process technology and characterization

[16p-A301-12] Formation of low resistance 4H-SiC n-type layer by laser doping
Study of Laser Doping Mechanism (part 5)

〇Kaname Imokawa¹, Ryoichi Nohdomi¹, Yasutsugu Usami¹ (1.Gigaphoton Inc.)

Keywords:laser doping, SiC, diffusion mechanism

A lower resistance is required for low on-resistance operation of SiC power devices. However, it is known that high-concentration nitrogen (N) doping causes a large number of stacking faults (SFs) and deterioration. Forming a diffusion layer with a laser (laser doping) is also considered effective as one of the methods for solving this problem.
Continuing from the previous report, we investigated the sheet resistance of the high-concentration nitrogen diffusion layer for the purpose of clarifying the diffusion mechanism by laser doping.