[16p-A301-1~6] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16p-A301-5] Strain Compensation and Emission Characteristics of InAsSb/InAsP Quantum Wells on GaAs Substrate with two-step growth InAs buffer

〇Koki Hombu¹, Shota Nakagawa¹, Yuto Iwakiri¹, Koji Maeda¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

Keywords:InAsSb, MOVPE, Quantum Well

The Type-I quantum wells with strain compensation are useful for gas sensing devices because of the challenges of miniaturization and high efficiency. In our previous report, we obtained good luminescence properties of InAsSb/InAsP on InAs substrate at room temperature. In this study, InAsSb/ InAsP quantum wells were grown on GaAs substrate using two-step growth InAs buffer.