15:30 〜 15:45
▲ [16p-A304-10] Oxygen Partial Pressure Dependence Effect to Mo-doped BiVO4 Thin-Film Photoanode Performance Sputtered by Single Target Radio Frequency
キーワード：semiconductor doping, photocatalysis, sputtering
BiVO4 (Bismuth Vanadate) is n-type semiconductor photoanode material with a suitable bandgap for visible light absorption and oxygen evolution reaction. Particular attention was paid to molybdenum (Mo) dopant is expected to be incorporated substitutionally at the V site and act as donors. Sputtering from a single target is beneficial to control the ratio balance of the sputtered film improving the film quality. Herein, we introduced the Mo doped to the BiVO4 film by single target sputtering fabrication with respect to the oxygen partial pressure percentage to improve the performance of photoanode water splitting.
All films were deposited using single target on conductive glass (Fluorine-doped Tin Oxide by RF (Radio Frequency) sputtering process. The fabrication were done with fixed 0.7 Pa total pressure in the chamber.
By different oxygen partial pressure, the films were controlled by different composition of Bi, V and Mo elements. The atomic ratio of V and Mo in the films have increased along with oxygen partial pressure increasing, shown in fig 1. The V-rich films support the good crystallinity to enhance the Photoelectrochemical performance [3]. The ratio balance of the film could affect the crystal structure and electronic properties of photoanode supporting the acceleration of carriers. Thus, the moderate Mo doping of BiVO4 can improve the film quality and photocurrent density of PEC water splitting. In agreement to the PEC performance shown in Fig 2, the photocurrent density enhance from 0.2 to the 1.06 mA/cm2 at 1.23V vs reversible hydrogen electrode (RHE) by Mo-doped in 15% O2.
All films were deposited using single target on conductive glass (Fluorine-doped Tin Oxide by RF (Radio Frequency) sputtering process. The fabrication were done with fixed 0.7 Pa total pressure in the chamber.
By different oxygen partial pressure, the films were controlled by different composition of Bi, V and Mo elements. The atomic ratio of V and Mo in the films have increased along with oxygen partial pressure increasing, shown in fig 1. The V-rich films support the good crystallinity to enhance the Photoelectrochemical performance [3]. The ratio balance of the film could affect the crystal structure and electronic properties of photoanode supporting the acceleration of carriers. Thus, the moderate Mo doping of BiVO4 can improve the film quality and photocurrent density of PEC water splitting. In agreement to the PEC performance shown in Fig 2, the photocurrent density enhance from 0.2 to the 1.06 mA/cm2 at 1.23V vs reversible hydrogen electrode (RHE) by Mo-doped in 15% O2.