[16p-A305-1~8] CS.2 Code-sharing Session of 3.4 & 3.13

[16p-A305-8] Temperature Dependent Lasing Characteristics of InGaAsP –MQW DFB Laser with pn-buried Heterostructure Grown on Semi-insulating InP Substrate

〇Hayato Arai¹, Wataru Kobayashi^1,2, Manabu Mitsuhara¹, Takahiko Shindo¹, Fumito Nakajima¹ (1.NTT Device Technology Lab., 2.NTT Device Innovation Center)

Keywords:DFB laser, communication

Lasers on n-type InP substrates with semi-insulating(SI) buried-heterostructure(BH) are usually used for laser communication. On the other hand, lasers on SI substrates are easy to electrically isolate electrodes of lasers and modulators, which enables differential drive. However, lower thermal conductivity compared to n-type substrate leads to reduction in optical power. To solve this problem, we employed pn-BH structure. pn-BH structure can more effectively block current and dissipate heat. In this report, we fabricated pn-BH DFB laser on SI substrates and investigated temperature dependent characteristics.