[16p-A401-1~17] 12.5 Organic and hybrid solar cells

▲ [16p-A401-9] Dopant and Interfacial Engineering giving Tin-Lead (SnPb) Perovskite Solar Cells with High Efficiency and Thermal Stability

〇(P)Shahrir Razey Sahamir¹, Gaurav Kapil¹, Takeru Bessho², Hiroshi Segawa², Qing Shen¹, Shuzi Hayase¹ (1.Univ. of Electro-Com, 2.Univ. of Tokyo)

Keywords:doping engineering, interfacial engineering, stability

In this research, the improvement in the performance and stabilities of the tin-lead (SnPb) PSCs was studied via two approaches; (1) addition of a dopant material which is capable of reducing the oxidized components in SnPb perovskite, (2) interfacial engineering. The chemical and the physical structure of the SnPb perovskite films will be altered upon oxidation which in turn compromising the PSCs performance and stability. In this study, we introduced metallic reducing dopant material (RDM) in the SnPb perovskite for the performance and stability enhancement. The electron transport layer was modified by introducing the m-ETL structure in order to further improve the thermal stability. The SnPb PSCs were subjected to the temperature of 85 °C for over 700 hours in nitrogen atmosphere. From series of experiments, we managed to achieve SnPb based PSCs with the highest efficiency of more than 21% and demonstrated high photo and thermal stability when RDM. The SnPb PSCs which was stored in the nitrogen filled air are able to retain more than 99% of their efficiencies after 1 month of storage. In term of thermal stability, the PSCs are able to retain 100% of their initial efficiencies after subjected to the temperature of 85 °C for over 700 hours in nitrogen atmosphere. We will elucidate the successful treatment of the doping and interlayer engineering by studying the morphological, structural and elemental of the SnPb thin films via SEM, XRD and XPS. We will also demonstrate the effects of doping and interlayer engineering via impedance spectroscopy technique by extracting electronic parameters in the SnPb PSCs such as the series and recombination resistances, and also the capacitance of the investigated devices. We conclude this research by proving the performance of the SnPb based PSCs could be enhanced by incorporation of RDM and m-ETL; rendering them more stable thermally and beneficial for long term application.