[16p-A408-1~18] 6.2 Carbon-based thin films

△ [16p-A408-12] Charge States Control of Diamond NV Center Using MOS Structure

〇Jeungmin Han^1,2, Moriyoshi Haruyama², Hiromitsu Kato², Masahiko Ogura², Yukako Kato², Toshiharu Makino^1,2 (1.Univ. of Tsukuba, 2.AIST)

Keywords:Diamond, NV center, MOS structure

Control of charge states of the diamond NV center is very important for applications in quantum technology. In this study, we fabricated the MOS structure on a diamond substrate to control the charge states of the NV center, which formed near MOS interface, by applying gate bias. As a result, we confirmed that the photoluminescence spectrum of the NV center changed from neterual to negatively charged state by applying the gate bias to the depletion side. Thus, we successfully controled the charge state of the NV center by using MOS structure.