[16p-B309-1~20] 17.1 Carbon nanotubes & other nanocarbon materials

△ [16p-B309-11] P-type doping of single-walled carbon nanotubes using boron-based Brønsted acid and development of highly efficient thermoelectric devices

〇Naoki Tanaka¹, Hamasuna Aoi¹, Fujigaya Tsuyohiko^1,2,3 (1.Kyushu univ., 2.WPI-I2CNER, 3.CMS)

Keywords:single-walled carbon nanotube, hole doping, thermoelectric generation

Carrier doping is a useful method to improve the performance of single-walled carbon nanotubes (SWCNTs). Superacids, metal oxides, and small organic molecules have been used as p-type dopants for SWCNTs so far, but Brønsted acid doping, which donates protons, has been difficult to control doping and obtain stability. In this study, we report on the successful fabrication of SWCNTs with high atmospheric stability using p-type dopants based on boron compounds, and the development of high-performance thermoelectric devices using these SWCNTs.