The 70th JSAP Spring Meeting 2023

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[16p-B401-1~13] 15.4 III-V-group nitride crystals

Thu. Mar 16, 2023 1:00 PM - 5:45 PM B401 (Building No. 2)

Yoshio Honda(Nagoya Univ.), Hisashi Murakami(TUAT), Atsushi Yamaguchi(Kanazawa Inst. of Tech.)

4:30 PM - 4:45 PM

[16p-B401-9] Etching characteristics of GaN nanoholes by hydrogen environment anisotropic thermal etching (HEATE) method

〇Takuto Honda1, Koji Yoneta1, Takeki Aikawa1, Umito Kurabe1, Mirai Akimoto1, Akihiko Kikuchi1,2,3 (1.Sophia Univ., 2.Sophia Photonic Research Center, 3.Sophia Semiconductor Research Institute)

Keywords:Gallium nitride, nanohole