[16p-B409-1~8] 3.12 Semiconductor optical devices (formerly 3.13)

[16p-B409-2] Photoluminescence Intensity dependence of InGaAs MQW on Relaxation Layer Composition

〇Kazuki Usui¹, Koki Hombu¹, Hidetosi Suzuki¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

Keywords:InGaAs, MOVPE

Metamorphic InGaAs on GaAs substrates is important as a material system for communication wavelength semiconductor lasers and solar cells. In order to realize device layers that are fully relaxed and free of residual strain, a layer with a significantly changed lattice constant, called an overshoot layer, is sometimes introduced. In this study, we report on the experimental investigation of the composition of the buffer layer with high luminescence intensity by growing a laser cladding layer on top of an InGaAs buffer layer with a different composition as the overshoot layer, and then growing a quantum well as the active layer on top of the cladding layer.