[16p-B409-1~8] 3.12 Semiconductor optical devices (formerly 3.13)

[16p-B409-4] Temperature Dependence of Emission Wavelength in Highly-stacked Quantum Dot Laser Fabricated on InP(311)B Substrate with Bi Atom Irradiation

〇Satoshi Yanase^1,2, Kouichi Akahane², Atsushi Matsumoto², Toshimasa Umezawa², Naokatsu Yamamoto², Yoriko Tominaga³, Atsushi Kanno^2,4, Tomohiro Maeda^1,2, Hideyuki Sotobayashi¹ (1.Aogaku Univ., 2.NICT, 3.Hiroshima Univ., 4.Nagoya Inst. of Tech.)

Keywords:quantum dot, semiconductor laser diode, bismuth

Semiconductor quantum dots have discrete energy levels, which greatly reduces the temperature dependence of the threshold current of semiconductor lasers. However, due to the temperature dependence of the semiconductor band gap, operating temperature changes the emission wavelength. In addition, Bi is expected to reduce the temperature dependence of the band gap because of its semi-metallic nature. In this study, we investigated Bi irradiation during crystal growth of QD laser diodes by molecular beam epitaxy.