4:15 PM - 4:30 PM
[16p-B414-13] Defect-assisted tunneling processes in graphene/C-doped h-BN junctions
Keywords:tunneling transport, hexagonal boron nitride, defect
We observed defect-assisted resonant tunneling in graphene/C-doped h-BN (BN:C)/graphite junctions through defects in BN:C. In devices with thin BN:C barrier, defect-assisted resonant tunneling through one defect is dominant. On the other hand, in devices with thick BN:C barrier, it is suggested that sequential defect-assisted resonant tunneling through two defects is dominant. In each case, we revealed a phonon-assisted inelastic tunneling process in addition to an elastic tunneling process.