[16p-B508-1~17] 13.3 Insulator technology

△ [16p-B508-9] Verification of stacking sequence control effect by monatomic layer insertion into perovskite oxide epitaxial interfaces

〇Atsushi Tamura¹, Koji Kita^1,2 (1.School of Eng., The Univ. of Tokyo, 2.School of Frontier Sci., The Univ. of Tokyo)

Keywords:dipole, perovskite, DRAM capacitor

The dipole effect in perovskite oxides increases the conduction band offset and is expected to reduce the leakage current, which is an issue in DRAM capacitors. A model that the stacking sequence of the LaAlO₃ dipole layer is determined by the surface terminating atoms of the underlying SrRuO₃ would be reasonable but has not been experimentally verified. In this study, the model was verified using lateral force microscopy, which measures the surface terminating atom-dependent frictional force, and the possibility of controlling the stacking sequence was demonstrated.