2023年第70回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

9 応用物性 » 9.4 熱電変換

[16p-D411-1~13] 9.4 熱電変換

2023年3月16日(木) 13:30 〜 17:15 D411 (11号館)

林 慶(東北大)、石部 貴史(阪大)、永岡 章(宮崎大)

16:30 〜 16:45

[16p-D411-11] Thermoelectric properties of bulk Ni-doped β-FeSi2

Sopheap Sam1、Soma Odagawa1、Hiroshi Nakatsugawa1、Yoichi Okamoto2 (1.Yokohama National Univ.、2.National Defense Academy)

キーワード:Thermoelectric properties, Silicides, ZT value

In this study, we investigate the effect of Ni doping on the structural, electrical, and thermoelectric properties of β-FeSi2 prepared by the conventional arc-melting technique. The result shows that the electrical resistivity can be effectively decreased with x due to the increase in carrier density. The absolute Seebeck coefficient of all Ni-doped samples is higher and more stable than that of non-doped ones due to the reduction in bipolar effect; however, it becomes decreasing as x increases due to the high carrier density and the increase in metallic ε-phase. The solid solution limit of Ni into the β-phase can be obtained at below x = 0.01. As a result, the highest power factor is obtained in x = 0.001 sample, leading to the improved ZT value of 0.019 at 600 K.