[16p-D419-1~18] 10.2 スピン基盤技術・萌芽的デバイス技術

▼ [16p-D419-1] Large anomalous Nernst effects in Ge-doped Co thin films

〇(M1)Takuya Tsujimoto¹、Takeshi Fujita²、Toshio Miyamachi¹、Masaki Mizuguchi¹ (1.Nagoya Univ.、2.Kochi Univ. Tech.)

キーワード：spintronics, spin caloritronics, the Anomalous Nernst effect

The anomalous Nernst effect (ANE) is expected as the new energy harvesting technology. The effect is defined as a generation of an electric field in the vertical direction to the magnetization of the sample and the applied temperature gradient. To realize the ANE devices, searching materials which have large ANE conversion efficiency and studying the thermoelectric transport property have attracted significant attention. In this study, we found that Ge doped Co thin films have large ANE compared to pure Co thin films and researched the mechanism of enhancement of ANE in CoGe thin films.