[16p-D505-1~9] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

△ [16p-D505-7] Phase transition of a MnTe thin film induced by sub-bandgap single-femtosecond excitation

〇Hiromori Takahashi¹, Mamoru Satou¹, Shunsuke Mori², Yuuji Sutou^2,4, Hiroshi Tanimura³, Toshiharu Saiki¹ (1.Keio Univ., 2.Touhoku Univ. (Eng), 3.Touhoku Univ. (IMR), 4.AIMR)

Keywords:MnTe, phase change material, femtosecond laser

Recently, phase-change random-access memory has attracted attention as a memory that can process data at high speed. The use of MnTe as a material for this memory is expected to realize energy-saving and high-speed operation.
In this study, β-phase MnTe thin films were irradiated with a single femtosecond laser pulse at 800 nm to induce a phase transition to the α-phase. As a result, a large difference in contrast was observed at the irradiated area, and Raman peaks due to the E2g phonon mode of α-MnTe were identified.