[16p-D511-1~11] 15.5 Group IV crystals and alloys

▲ [16p-D511-6] Tensile lattice strain in embedded wire structures of Ge grown on Si substrate

〇(M1)JOSHUA CHOMBO¹, Bin Amin Mohd Faiz¹, Takeshi Hizawa¹, Jose A. Piedra-Lorenzana¹, Mingjun Jiang², Donghwan Ahn², Kazumi Wada³, Yasuhiko Ishikawa¹ (1.Toyohashi Univ. Tech., 2.Kookmin Univ., 3.MIT)

Keywords:Germanium, Lattice strain

A Ge epitaxial layer on Si has been examined as a prospective material to fabricate light-emitting devices in Si photonics. The tensile lattice strain in Ge plays an important role in efficient direct-gap light emission. However, an edge-induced strain relaxation occurs in an exposed wire of Ge on Si. This work presents an approach to maintain the tensile lattice strain in a wire structure of Ge. By embedding a narrow Ge wire in Si, the tensile lattice strain is as large as that of an ordinary blanket Ge film.