[16p-D511-1~11] 15.5 IV族結晶，IV-IV族混晶

▲ [16p-D511-6] Tensile lattice strain in embedded wire structures of Ge grown on Si substrate

〇(M1)JOSHUA CHOMBO¹、Bin Amin Mohd Faiz¹、Takeshi Hizawa¹、Jose A. Piedra-Lorenzana¹、Mingjun Jiang²、Donghwan Ahn²、Kazumi Wada³、Yasuhiko Ishikawa¹ (1.Toyohashi Univ. Tech.、2.Kookmin Univ.、3.MIT)

キーワード：Germanium, Lattice strain

A Ge epitaxial layer on Si has been examined as a prospective material to fabricate light-emitting devices in Si photonics. The tensile lattice strain in Ge plays an important role in efficient direct-gap light emission. However, an edge-induced strain relaxation occurs in an exposed wire of Ge on Si. This work presents an approach to maintain the tensile lattice strain in a wire structure of Ge. By embedding a narrow Ge wire in Si, the tensile lattice strain is as large as that of an ordinary blanket Ge film.