[16p-D511-1~11] 15.5 Group IV crystals and alloys

[16p-D511-8] Diode characteristics and room temperature EL emission of
strained SiGe/Ge quantum well LEDs

〇Shuya Kikuoka¹, Youya Wagatsuma¹, Yuwa Sugiura¹, Rena Kanesawa¹, Michihiro Yamada^3,4, Kohei Hamaya^2,4,5, Kentarou Sawano¹ (1.Tokyo City Univ., 2.GSES, Osaka Univ., 3.JST-PRESTO, 4.CSRN, Osaka Univ., 5.OTRI, Osaka Univ.)

Keywords:Ge, MBE, SiGe