[16p-D704-1~18] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

▲ [16p-D704-10] Effect of carrier concentration on low-temperature spin transport in strained n-Si_0.1Ge_0.9

〇(M1)Kazuaki Kawashima¹, Takahiro Naito¹, Michihiro Yamada^2,3, Takuya Okada¹, Youya Wagatsuma⁴, Kentarou Sawano⁴, Kohei Hamaya^1,2,5 (1.GSES, Osaka Univ., 2.CSRN, Osaka Univ., 3.JST-PRESTO, 4.Tokyo City Univ., 5.OTRI, Osaka Univ.)

Keywords:spintronics, spin lifetime, silicon germanium