[16p-D704-1~18] 10.4 半導体・トポロジカル・超伝導・強相関スピントロニクス

▲ [16p-D704-10] Effect of carrier concentration on low-temperature spin transport in strained n-Si_0.1Ge_0.9

〇(M1)Kazuaki Kawashima¹、Takahiro Naito¹、Michihiro Yamada^2,3、Takuya Okada¹、Youya Wagatsuma⁴、Kentarou Sawano⁴、Kohei Hamaya^1,2,5 (1.GSES, Osaka Univ.、2.CSRN, Osaka Univ.、3.JST-PRESTO、4.Tokyo City Univ.、5.OTRI, Osaka Univ.)

キーワード：spintronics, spin lifetime, silicon germanium