2023年第70回応用物理学会春季学術講演会

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10 スピントロニクス・マグネティクス » 10.4 半導体・トポロジカル・超伝導・強相関スピントロニクス

[16p-D704-1~18] 10.4 半導体・トポロジカル・超伝導・強相関スピントロニクス

2023年3月16日(木) 13:30 〜 18:30 D704 (11号館)

福島 鉄也(東大)、名和 憲嗣(三重大)、小林 正起(東大)

18:15 〜 18:30

[16p-D704-18] Demonstration of Ferroic Behavior of Berry Curvature Dipole in a Topological Crystalline Insulator at 300 K

〇(D)Taiki Nishijima1、Takuto Watanabe2、Hiroaki Sekiguchi2、Yuichiro Ando1、Ei Shigematsu1、Ryo Ohshima1、Shinji Kuroda2、Masashi Shiraishi1 (1.CSRN, Kyoto Univ.、2.Univ. Tsukuba)

キーワード:topological crystalline insulator, Berry curvature, non-volatile

The physics related to Berry curvature is now a central research topic in condensed matter physics. The Berry curvature dipole (BCD) is a significant and intriguing physical parameter that characterizes the antisymmetric distribution of Berry curvature. The BCD exists under inversion symmetry breaking, which induces current-driven out-of-plane magnetization and nonlinear Hall effect (NLHE). However, the creation and controllability of BCDs have been limited to far below room temperature (RT) and nonvolatile (i.e., ferroic) BCDs have not yet been discovered, hindering further progress in topological physics. In this work, we focused on a topological crystalline insulator, Pb1-xSnxTe (PST) to realize the ferroic BCD and demonstrated the ferroic BCD by measuring NLHE induced by BCD in PST.