[16p-D704-1~18] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

[16p-D704-6] Characterization of the out-of-plane Dresselhaus effective magnetic field in InGaAs/InAlAs (110) multiple quantum wells

〇Shota Sato¹, Kyohei Sugaya¹, Koichi Nakanishi¹, Nobuhide Yokota², Makoto Kohda², Ken Morita¹ (1.Chiba Univ., 2.Tohoku Univ.)

Keywords:InGaAs (110) quantum wells, out-of-plane Dresselhaus effective magnetic field, Monte-Carlo simulation

The spin-orbit interaction (SOI) in III-V semiconductor quantum wells (QWs) acts as an effective magnetic field for electrons with momentum. In this study, we performed spatiotemporally resolved KR measurements of electron spins in (110) InGaAs QWs at room temperature and Monte-Carlo simulations that reproduce the experimental results. It is concluded that a large Dresselhaus SO coefficient can be obtained compared to the (001) plane by evaluating the effective magnetic field.