[16p-E502-1~9] 12.4 Organic light-emitting devices and organic transistors

[16p-E502-8] Development of logic-in-memory with floating-gate-type antiambipolar transistors (1): ternary logic-in-memory

〇Ryoma Hayakawa¹, Debdatta Panigrahi¹, Xinhao Zhong¹, Junko Aimi¹, Yutaka Wakayama¹ (1.NIMS)

Keywords:antiambipolar transistor, ternary logic-in-memory, floating gate

Toward upcoming Internet of Everything (IoE) society, the development of high-performance organic integration circuits is highly required. In this regard, we have developed organic antiambipolar transistors (AATs) because the transistors exhibit negative differential transconductance at room temperature. In this study, we demonstrated a ternary logic-in-memory device based on a floating-gate-type AAT, where a zinc-phthalocyanine-cored stair-shaped polystyrene (ZnPc-PS₄) was employed as a floating gate. Consequently, we achieved ternary logic circuit and memory operations in the same device configuration.