[16p-PA04-1~24] 13.7 Compound and power devices, process technology and characterization

[16p-PA04-14] Evaluation and Consideration of Heating Efficiency in Microwave Annealing of GaN

〇Takashi Nakamura¹, Heajeong Cheong², Atsushi Tanaka², Hiroshi Amano² (1.AIST, 2.Nagoya Univ.)

Keywords:microwave, nitride, annealing

We have found that GaN can be heated to over 1400°C in 20 seconds by placing it in a microwave magnetic field and applying electromagnetic energy. In order to understand this heating phenomenon, the heat generation data of GaN is compared with the simulation data of the strength and power density of the electromagnetic field, and the heating efficiency is evaluated and considered.