[16p-PA04-1~24] 13.7 Compound and power devices, process technology and characterization

[16p-PA04-15] Investigation of Topology Optimization for Design of Field Limiting Rings in GaN Vertical Power Devices

〇(M1)Takuma Yamaguchi¹, Katsuya Nomura¹, Yoshiyuki Hattori² (1.Kwansei Gakuin Univ., 2.Daido Univ.)

Keywords:Power Devices, GaN, Topology Optimization

In this report, we focused on the fact that the FLR structure can be regarded as a structure with a normalized dose amount of 0 or 1, and show the effect of normalized dose amount binarization using double-well potentials as a basic study for establishing an optimized design method for field limiting rings (FLR) structures in GaN vertical power devices. By minimizing the objective function while gradually tightening the constraints set, the normalized dose amount was approximately binarized, but the issue of increasing the objective function became apparent.