[16p-PA04-1~24] 13.7 化合物及びパワーデバイス・プロセス技術・評価

▲ [16p-PA04-20] Analysis of Lateral Superjunction Silicon Power Device with Multiple Layers by TCAD Simulation

〇(M2)Peilin Ji¹、Munetoshi Fukui¹、Takuya Saraya¹、Masaharu Kobayashi¹、Toshiro Hiramoto¹ (1.The Univ. of Tokyo)

キーワード：superjunction, power device

One of the advantages of a lateral power device over a vertical one is that it is easier to integrate with other transistors. The lateral superjunction (SJ) device is promising as a future integrated power device with high breakdown voltage (V_BD) and low specific on-resistance (R_{ON, sp}). However, one of the demerits of SJ devices is that V_BD is very sensitive to the balance of p/n concentrations (N_A and N_D). In this work, the device characteristics of SJ devices with two layers and multiple layers were simulated and analyzed.