[16p-PA09-1~18] 6.4 Thin films and New materials

[16p-PA09-11] Effect of crystallization of GST on IMT of VO₂ in GST/VO₂ layered structure (II)
- Comparison of TiO₂ (001) and Al₂O₃ (001) substrates -

〇(M1)Takuto Ohnuki¹, Kunio Okimura¹, Reki Nakamoto², Yuji Muraoka³, Joe Sakai⁴, Masashi Kuwahara⁵ (1.Graduate School of Engineering, Tokai Univ., 2.Graduate School of Natural Science and Technology, Okayama Univ., 3.Okayama Univ. RIIS, 4.Toshima Manufacturing Co., Ltd., 5.National Institute of Advanced Industrial Science and Technology)

Keywords:thin film, GST, vanadium dioxide

VO2 has some issues such as the volatile nature of the induced metallic phase and the rather high IMT temperature for device applications. In this study, we attempted to control IMT by adding strain to VO2 due to the volume change of GST, which is a phase-change material. The comparison between the TiO2 substrate, in which V-V pairs grow along the plane direction, and the Al2O3 substrate, in which V-V pairs grow parallel to the substrate, is useful in verifying the effect of GST.