[17a-A301-1~9] 13.7 Compound and power devices, process technology and characterization

[17a-A301-7] Proposal of Drift Resistance Free-Structure for Diamond MOSFET

〇Tsubasa Matsumoto¹, Kai Sato¹, Yuto Nakamura¹, Traore Aboulaye², Toshiharu Makino³, Hiromitsu Kato³, Masahiko Ogura³, Kimiyoshi Ichikawa¹, Kan Hayashi¹, Takao Inokuma¹, Satoshi Yamasaki¹, Norio Tokuda¹ (1.Kanazawa Univ., 2.Tsukuba Univ., 3.AIST)

Keywords:Diamond, MOSFET, Drift resistance

Since MOSFETs, in principle, exhibit normally-off characteristics, they are excellent in reliability and energy saving, and power devices using Si and SiC are widely used. Diamond has a higher dielectric breakdown field and carrier mobility than these materials, and is a material that is expected to withstand even higher breakdown voltage and frequency. We propose a structure that takes advantage of the deep impurity level, which is one of the important issues in diamond.