[17a-A301-1~9] 13.7 Compound and power devices, process technology and characterization

[17a-A301-9] Long Stress (190h) Measurements of Diamond MOSFET

Saha Niloy Chandra¹, Tomoki Shiratsuchi¹, Seong-Woo Kim², Koji Koyama², Toshiyuki Oishi¹, 〇Makoto Kasu¹ (1.Saga Univ., 2.Orbray Co., Ltd.)

Keywords:diamond, stress measurement, MOSFET

We report long stress measurement of diamond MOSFET.