[17a-A405-1~9] 3.6 Laser processing (formerly 3.7)

[17a-A405-1] Electron-temperature effect on laser ablation: molecular dynamics simulation

〇Ryo Kobayashi¹, Tomohito Otobe² (1.NITech, 2.QST)

Keywords:laser ablation, molecular dynamics simulation, electron temperature

Molecular dynamics (MD) simulation has become a promising tool for studying material's response to ultra-short strong laser irradiation. The accuracy of MD simulation depends strongly on interatomic potentials used in the MD simulation. However, the interatomic interactions are considered to be dependent on the distribution of electrons inside materials under laser irradiation. In this study, we developed an electron-temperature dependent interatomic potential for Si, and conducted laser ablation MD simulation to study the effects of electron temperature on the response of material surface against laser irradiation. Details of the results are to be discussed in the presentation.