2023年第70回応用物理学会春季学術講演会

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22 合同セッションM 「フォノンエンジニアリング」 » 22.1 合同セッションM 「フォノンエンジニアリング」

[17a-D511-1~9] 22.1 合同セッションM 「フォノンエンジニアリング」

2023年3月17日(金) 09:15 〜 11:45 D511 (11号館)

塩見 淳一郎(東大)、太田 裕道(北大)

10:00 〜 10:15

[17a-D511-4] Active Layer for Solid-State Electrochemical Thermal Transistors II:
SrCoOx−SrRuOx solid solutions

〇(D)Zhiping Bian1、Hiromichi Ohta2 (1.IST-Hokudai、2.RIES-Hokudai)

キーワード:Thermal transistor

Very recently, we realized solid-state electrochemical thermal transistors with thermal conductivity (κ) ON/OFF ratio of ~4 by utilizing phase transition of SrCoOx by the redox treatment. Through the modulation of the active layer by SrCoOx−SrFeOx solid solution, we found that electronic thermal conductivity (κele) and phase transition play a crucial role to increasing the ON/OFF ratio of SrCoOx-based thermal transistors. In order to study the properties of SrCoOx-based thermal transistors more in-depth, we tested SrCoOx−SrRuOx solid solution as the active layer.
Out-of-plane XRD patterns of the resultant films indicate the change in the lattice parameter c upon redox treatment becomes large with increasing x. Among them, only SrCo0.7Ru0.3Oy shows a transition from perovskite (P) to infinite-layer structure (IL). When x < 0.3, SrCo1−xRuxOy shows a transition from P to defect perovskite (DP) phase. However, when x > 0.3, SrCo1−xRuxOy shows a robust P phase during redox treatment. κ for oxidized SrCo1−xRuxO3 shows decreasing trend first and then increasing with x = 0.5 as the boundary. It would be because of the [RuO6]−[CoO6] octahedra having charge transfer interaction, which can make the structure stable (Co4+ → Co3+ and Ru4+ → Ru5+). Regarding to the reduction state, κ decrease due to heavy ion substitution when x = 0.1. When x > 0.1, DP changes to IL, this results in an increasing trend of κ.