[17a-D704-1~9] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▲ [17a-D704-5] Large tunnel magnetoresistance in (111)-oriented junctions with a SrTiO₃ barrier

〇Keisuke Masuda¹、Hiroyoshi Itoh²、Yoshiaki Sonobe³、Hiroaki Sukegawa¹、Seiji Mitani¹、Yoshio Miura¹ (1.NIMS、2.Kansai Univ.、3.Waseda Univ.)

キーワード：tunnel magnetoressitance (TMR), magnetic tunnel junction (MTJ), SrTiO3

We theoretically investigate the TMR effect in novel (111)-oriented magnetic tunnel junctions (MTJs) with a SrTiO₃ barrier, X/SrTiO₃/X(111) (X = Co, Ni). On the basis of the ballistic transport theory, we calculate TMR ratios by using the first-principles calculation and the Landauer formula. It is found that both MTJs have high TMR ratios of ~ 500% for the Co-based MTJ and ~ 300% for the Ni-based MTJ. The underlying mechanism of the high TMR ratios will be clarified.