[17a-D704-1~9] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▲ [17a-D704-8] Staircase-like tunnel resistance increase with barrier thickness in epitaxial Fe/Mg₄Al-Ox/Fe(001) magnetic tunnel junctions

〇Thomas Scheike¹、Zhenchao Wen¹、Shinya Kasai¹、Hiroaki Sukegawa¹、Seiji Mitani¹ (1.NIMS)

キーワード：MTJ, TMR, oscillation

Absent in most theoretical calculations, we aim to give further experimental inside on the behavior of TMR oscillations of recently reported Fe/wedged Mg₄Al-O_x/Fe with peak RT TMR >400%. For this, we measured an array of over 450 MTJs on the same wafer and report Lorentz-like oscillation components in tunnel resistances at RT.