[17a-PA03-1~24] 12.3 Functional Materials and Novel Devices

[17a-PA03-15] High photoluminescence quantum yield of perovskite quantum dots by passivating for A site defect

〇(B)Souki Satou¹, Yusaku Morikawa², Satoshi Asakura³, Takayuki Chiba^4,5, Akito Masuhara^2,5 (1.Eng., Yamagata Univ., 2.Grad. Sch. of Sci. and Eng., Yamagata Univ., 3.Ise Chem. Corp., 4.Grad. Sch. of Org. Mat. Sci., Yamagata Univ., 5.FROM, Yamagata Univ.)

Keywords:perovskite quantum dot, high photoluminescence quantum yield, defect passivation

ABX₃ typed perovskite quantum dots (PeQDs) have attracted attention as a light source for next-generation optical materials due to wide color gamut and high color purity. However, due to A site defects in PeQDs, the photoluminescence quantum yield (PLQY), which is one of the factors of device efficiency, is low. And the low PLQY is an issue for the practical use of PeQDs. In detail, the A site defects distorted the crystal structure of PeQDs. Subsequently, a trap level was generated, promoting non-radiative deactivation, and decreasing the PLQY. Herein, PeQDs with high PLQY were successfully prepared by adding alkali metal to solve the issues. By adding the alkali metal in PeQDs, the distortion of the crystal structure of PeQDs was alleviated. As a result, the PLQY of PeQDs was improved from 28 % to 84 %.