[17a-PA04-1~18] 12.4 Organic light-emitting devices and organic transistors

[17a-PA04-11] Water-Induced Instabilities in Laminated Organic Single-Crystal FETs Controlled by Source/Drain Electrode Thickness

Yuto Hamahiga¹, 〇Ryo Nouchi^1,2 (1.Osaka Metropolitan Univ, 2.JST-PRESTO)

Keywords:hysteresis, work function, charge-injection barrier

It has been known for a long time that when water molecules penetrate the insulator-semiconductor interface, a current-decreasing effect induced by the gate bias stress occurs. In fact, in addition to this, a current-increasing effect from the source and drain electrodes, which was discovered by our group, also occurs and these two factors multiply affect the FET characteristics. In main conference, we will report that the hysteresis in bottom gate, bottom contact FETs with organic single crystals pasted can be modulated by controlling the penetration of water molecules near the electrodes with the electrode thickness.