[17p-A202-1~16] 3.8 テラヘルツ全般（旧3.9）

▲ [17p-A202-13] Noncontact interface potential estimation on VO₂/Si heterojunction with temperature variation

〇(D)Dongxun Yang¹、Fumikazu Murakami¹、Shingo Genchi²、Hidekazu Tanaka²、Masayoshi Tonouchi¹ (1.Osaka Univ.、2.SANKEN Osaka Univ.)

キーワード：Terahertz emission spectroscopy (TES), VO2/Si heterojunction

Vanadium oxide (VO₂) exhibits a phase transition from an insulating monoclinic phase (M) to a conductive rutile phase (R) around 340 K. In this study, the THz emission properties from the VO₂-based structures have been focused. The relationship between the THz emission amplitude and the temperature conditions is figured out to estimate the electric properties of the VO₂/Si heterojunction, such as the interface potential. Meanwhile, we discussed the influence of the doping conditions of the Si substrate on the THz emission properties and estimated the work function variation across the phase transition.