[17p-A403-1~17] 16.3 Bulk, thin-film and other silicon-based solar cells

△ [17p-A403-8] A statistical study of the effect of interface shape and growth time on dislocation density in multicrystalline Si

〇(M2)Hiroyuki Tanaka¹, Kentaro Kutsukake², Takuto Kojima³, Xin Liu¹, Noritaka Usami¹ (1.Grad School of Eng., Nagoya Univ., 2.AIP, RIKEN, 3.Grad School of Info., Nagoya Univ.)

Keywords:crystal growth, Directional solidification method, Simulation

There is an implicit understanding that smooth melt-crystal (m-c) interfaces and reduced growth rates during melt growth are effective in reducing dislocation density in crystals. However, many previous studies compared the results of changing process conditions, such as heater temperatures, to reduce dislocation density with many constraints coming from the specification of a particular crystal growth furnace. In this study, the relationship between the m-c interface shape, growth rate, and dislocation density are statistically investigated by simulating various temperature distributions without assuming particular crystal growth furnace. Especially, simulation data were examined in detail to ascertain whether there is a causal relationship between the m-c interface shape and dislocation density.