[17p-A405-1~14] 3.6 レーザープロセシング（旧3.7）

▼ [17p-A405-11] Excitation dynamics in silicon using two-dimensional Three-Temperature Model

〇(P)Prachi Venkat¹、Tomohito Otobe^1,2 (1.KPSI (QST)、2.PSC (Univ. of Tokyo))

キーワード：Laser processing, numerical modeling, damage threshold

Study of excitation in silicon using a Two-Dimensional Three-Temperature Model (2D-3TM) is presented. 2D-3TM calculates the transverse flow of energy and the electron and lattice dynamics on the surface of the silicon film, in addition to the dynamics within the film, which was calculated by the one-dimensional model. It will help understand the damage process on the surface of the film and the effect of laser spot size and how it can affect the damaged area and dynamics.