[17p-B309-1~19] 17.2 グラフェン

[17p-B309-9] Carrier dimensionality control of multilayer in-plane heterostructure of BN-C

〇(M1)Hui Zhang¹、Mina Maruyama¹、Yanlin Gao¹、Susumu Okada¹ (1.Univ. Tsukuba)

キーワード：BNC heterosheet, Electronic structure

We investigate the electronic properties of two-dimensional superlattice consisting of polyacene framework and zigzag hBN ribbons and its multilayer structure using the density functional theory with generalized gradient approximation.The in-plane heterostructure is a semiconductor with flat dispersion band in its valence band and conduction band edges owing to the border localized states between BC and NC zigzag borders, respectively. By forming trilayer structures, carrier distributions of the band edges of trilayer BNC sheets are sensitive to their stacking arrangement in hBN region. Trilayer BNC structures with AA’, AB (B-N-B stacking), AB (N-B-N stacking), and ABC stacking arrangements have 2D, 1D, 2D, and 1D carriers, respectively, in their valence band edges. These stacking dependent carrier distribution is ascribed to the modulation of the electrostatic potential due to the formation of the multilayer heterostructures.