The 70th JSAP Spring Meeting 2023

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[17p-B410-1~12] 13.8 Optical properties and light-emitting devices

Fri. Mar 17, 2023 1:30 PM - 4:45 PM B410 (Building No. 2)

Yasushi Nanai(National Defense Academy), Jun Tatebayashi(Osaka Univ.)

4:30 PM - 4:45 PM

[17p-B410-12] 【Highlighted Presentation】High-yield Synthesis of AgInxGa1xS2 Quantum Dots and Spectrally Narrow Green Photoluminescence by GaSy Shell Coating

Taro Uematsu1, Tatsuya Hirano1, Tsukasa Torimoto2, Susumu Kuwabata1 (1.Osaka Univ., 2.Nagoya Univ.)

Keywords:quantum dots, cadmium-free, band-edge emission

AgInxGa1−xS2/GaSy core/shell quantum dots are cadmium-free quantum dots having green-color emission with a narrow spectral width. Multinary nanomaterial synthesis is difficult to obtain the desired product due to differences in reactivity between the elements. In this study, we obtained the AgInxGa1−xS2 nanoparticles with a high product yield while maintaining the simplicity of a one-batch reaction. The method consists of the rapid generation of Ag2S seeds by injecting an Ag source into an activated S source. Subsequently, the incorporation of In, Ga, and S into the preformed Ag2S nanoparticles generates target AgInxGa1−xS2 nanoparticles.