[17p-B410-1~12] 13.8 Optical properties and light-emitting devices

[17p-B410-3] Luminescent properties of GaN:Eu,O annealed at high temperature under photoexcitation and current injection

〇Takenori Iwaya^1,3, Shuhei Ichikawa^1,2, Dolf Timmerman¹, Volkmar Dierolf³, Hayley Austin³, Brandon Mitchell^1,3,4, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ., 2.Research Center for UHVEM, Osaka Univ., 3.Lehigh Univ., 4.West Chester Univ.)

Keywords:GaN:Eu, O

We have reported that post-growth thermal annealing at a high temperature reconstructs luminescent site in Eu,O-codoped GaN grown using organometallic vapor-phase epitaxy method, and converts inefficient sites into efficient ones. In this report, we focus on an efficient site that is preferentially formed and discuss on its luminescent properties under photoexcitation and current injection.