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[17p-D419-13] Effects of annealing temperature on optical properties of Ni(OH)2 thin films
Keywords:nickel hydroxide the film, sputtering, bandgap energy
Electrochemically-active nickel hydroxide [Ni(OH)2] thin films were deposited by reactive sputtering. Bandgap energy of the Ni(OH)2 thin films was studied because previous reports on it were scarce. The bandgap energy of the Ni(OH)2thin films was found to be about 4.2 eV, and it decreased by annealing above 150 degree C due to the thermal decomposition to NiO.