IGZO Deposition-Technique Development for Semiconductor-Device Mass-Production

Keiichi Nagasaka; Hiroyuki Iwashita; Hao Zeng; Shota Ishibashi; Takahiro Yoshimatsu; Hisashi Warashina; Hiroyuki Tomita; Toru Kitada; Hiroki Maehara

Presentation information

Symposium (Oral)

Symposium » What is next killer application after display? Leading edge technology of oxide semicondutor

[17p-E302-1~8] What is next killer application after display? Leading edge technology of oxide semicondutor

Fri. Mar 17, 2023 1:30 PM - 5:55 PM E302 (Building No. 12)

Yukiharu Uraoka(NAIST), Masaharu Kobayashi(Univ. of Tokyo), Keiji Ikeda(KIOXIA)

2:00 PM - 2:30 PM

[17p-E302-2] IGZO Deposition-Technique Development for Semiconductor-Device Mass-Production

〇Keiichi Nagasaka¹, Hiroyuki Iwashita², Hao Zeng², Shota Ishibashi², Takahiro Yoshimatsu¹, Hisashi Warashina¹, Hiroyuki Tomita¹, Toru Kitada², Hiroki Maehara¹ (1.TEL, 2.TEL Tech. Solu.)

Keywords:semiconductor, IGZO, deposition

TFT device utilizing IGZO oxide-semiconductor channel-material, which has already been adopted in FPD, is expected to be applied in semiconductor logic and memory fields. However further scaling and yield are strongly in demand for their realizations. Mass-production deposition-equipment technique has been developed for oxide-semiconductor devices with such as IGZO leading material in our group. Evaluated data of performance or mass productivity of the IGZO film and TFT device by PVD equipment will be introduced.